A Review of the Gate-All-Around Nanosheet FET Process Opportunities
نویسندگان
چکیده
In this paper, the innovations in device design of gate-all-around (GAA) nanosheet FET are reviewed. These span enablement multiple threshold voltages and bottom dielectric isolation addition to impact channel geometry on overall performance. Current scaling challenges for GAA FETs reviewed discussed. Finally, an analysis future required continue technologies is
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ژورنال
عنوان ژورنال: Electronics
سال: 2022
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics11213589